Robust midgap states in band-inverted junctions under electric and magnetic fields

• Álvaro Díaz-Fernández,
• Natalia del Valle and
• Francisco Domínguez-Adame

Beilstein J. Nanotechnol. 2018, 9, 1405–1413, doi:10.3762/bjnano.9.133

• presence of crossed electric and magnetic fields, the electric field being applied along the growth direction of a band-inverted junction. We show that the Dirac cone is robust and persists even if the fields are strong. In addition, we point out that Landau levels of electron states lying in the

• semiconductor bands can be tailored by the electric field. Tunable devices are thus likely to be realizable, exploiting the properties studied herein. Keywords: crystalline topological insulators; electric and magnetic fields; Landau levels; midgap states; Introduction In 1982, Thouless et al. [1] made a

• of arbitrary strengths and that the Landau levels in the continuum split for non-zero values of the in-plane momentum in the direction perpendicular to the magnetic field. By means of the modern theory of symmetry-protected topological phases, the protection of the Dirac point can be understood in

Thermoelectric current in topological insulator nanowires with impurities

• Sigurdur I. Erlingsson,
• Jens H. Bardarson and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1156–1161, doi:10.3762/bjnano.9.107

• gap at k = 0 resulting from the antiperiodic boundary conditions [20][21]. For the case of non-zero magnetic fields, precursors of Landau levels around k = 0 are seen, both at negative and positive energy. The local minima away from k = 0 are precursors of snaking states. Such sates have been studies

Valley-selective directional emission from a transition-metal dichalcogenide monolayer mediated by a plasmonic nanoantenna

• Haitao Chen,
• Mingkai Liu,
• Lei Xu and
• Dragomir N. Neshev

Beilstein J. Nanotechnol. 2018, 9, 780–788, doi:10.3762/bjnano.9.71

• polarization [15], valley Hall effect [16], and valley-dependent photogalvanic effect have been explored. Excitonic valley coherence [17], valley- and spin-polarized Landau levels [18] and valley Zeeman effect [19][20][21][22] have also been studied in monolayer TMDCs. Different schemes to control the valley

Spin annihilations of and spin sifters for transverse electric and transverse magnetic waves in co- and counter-rotations

• Hyoung-In Lee and
• Jinsik Mok

Beilstein J. Nanotechnol. 2014, 5, 1887–1898, doi:10.3762/bjnano.5.199

• ] but also to the vector potential leading to the Landau levels in quantum mechanics [19]. Let us refer again to the schematic Figure 1a in both Cartesian and cylindrical coordinates, where a cylinder located at r = R divides the interior from exterior. Figure 1b displays the TE and TM waves, each being

• the kinetic momentum in the Hamiltonian, in which the light-matter interactions lead to the quantized Landau levels in quantum mechanics [19]. See Section S7 of Supporting Information File 1 for details. As with , in the interior for the counter-rotational case, as seen from the vanishing denominator

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

• Debashis De,
• Sitangshu Bhattacharya,
• S. M. Adhikari,
• A. Kumar,
• P. K. Bose and
• K. P. Ghatak

Beilstein J. Nanotechnol. 2011, 2, 339–362, doi:10.3762/bjnano.2.40

• , ω3) for all materials as considered in this paper. 5.6 Generalized Raman gain The generalized Raman gain in optoelectronic materials can be expressed as [39] where is the Fermi factor for spin-up Landau levels, is the Fermi factor for spin down Landau levels and the other notations are defined in